TSM2N7002AKDCU6 RFG

Overview

The TSM2N7002AKDCU6 RFG is a dual N-channel power MOSFET manufactured by Taiwan Semiconductor Corporation. It features a maximum drain-source voltage (VDS) of 60 V and a continuous drain current (ID) of 220 mA at 25°C. The device offers a low on-state resistance (RDS(on)) of 2.5 Ω maximum at VGS = 10 V, with a gate charge (Qg) of 0.91 nC maximum at VGS = 4.5 V. Packaged in an SOT-363 surface-mount housing, it supports a total power dissipation of 240 mW at 25°C and operates within a junction temperature range of -55°C to +150°C.

Feature Summary

• Dual N-channel configuration for compact circuit integration
• Logic level operation enabling direct drive from standard logic outputs
• Low gate charge optimized for fast switching performance
• ESD protection rated at 2.5 kV under Human Body Model conditions

Applications

• Low side load switching
• Level shift circuits
• General switch circuits

Procurement Notes

Verify the specific ordering code TSM2N7002AKDCU6 RFG against official Taiwan Semiconductor documentation to confirm package type and packing quantity. Ensure that the required moisture sensitivity level and RoHS compliance align with assembly standards before procurement.

Selection Notes

Select this component when a dual N-channel MOSFET is required in an SOT-363 package. Consider the 2.5 Ω RDS(on) limit at VGS = 10 V and the 220 mA continuous current rating for appropriate thermal management. Verify that the 60 V breakdown voltage meets the circuit's maximum operating requirements.

Part Context

This part belongs to the TSM2N7002 series of dual N-channel power MOSFETs produced by Taiwan Semiconductor. It utilizes DMOS technology to achieve low on-resistance and high saturation current capability within a small surface-mount footprint suitable for dense PCB layouts.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material.