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TSM4NB60CI C0G is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Taiwan Semiconductor Corporation. Its product description is MOSFET N-CH 600V 4A ITO220AB. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for TSM4NB60CI C0G
- Description：MOSFET N-CH 600V 4A ITO220AB
- Series：-
- Mfr：Taiwan Semiconductor Corporation
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：2.5Ohm @ 2A, 10V
- Vgs(th) (Max) @ Id：4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：14.5 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：500 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：50W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：ITO-220AB
- Package / Case：TO-220-3 Full Pack, Isolated Tab
Single FETs, MOSFETs datasheet and documents for TSM4NB60CI C0G
Single FETs, MOSFETs Overview
The TSM4NB60CI C0G is a single N-channel enhancement mode power MOSFET manufactured by Taiwan Semiconductor. It features a 600V drain-source voltage rating and supports continuous drain currents up to 4A in through-hole applications. The device utilizes an ITO-220 package with a maximum power dissipation of 50W at case temperature. Key electrical characteristics include a low on-resistance, fast switching speeds with typical rise and fall times, and an AEC-Q101 qualification for automotive reliability standards.
Single FETs, MOSFETs Feature Summary
- Automotive-grade reliability certified under AEC-Q101 standards
- High-voltage capability with 600V breakdown rating
- Optimized for high-speed switching applications
- Robust thermal performance in ITO-220 through-hole packaging
Single FETs, MOSFETs Applications
- Automotive power management systems
- DC-DC converter circuits
- Motor control drives
- Industrial power supplies
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix 'C0G' matches your design requirements, as it may indicate specific tape-and-reel or tube packaging configurations distinct from standard variants. Confirm RoHS compliance status directly with the manufacturer's latest documentation. Ensure the ordering part number aligns exactly with the datasheet revision to avoid discrepancies in pinout or electrical parameters during procurement.
Single FETs, MOSFETs Selection Notes
Select this component when designing circuits requiring high voltage isolation and automotive-grade durability. The ITO-220 package facilitates efficient heat dissipation for moderate current loads. Consider the gate charge and threshold voltage specifications to ensure compatibility with your driver circuitry. Verify that the 4A continuous current rating meets the peak and RMS load requirements of your specific application scenario.
Single FETs, MOSFETs Part Context
This part belongs to Taiwan Semiconductor's TSM series of N-channel power MOSFETs designed for general-purpose and automotive applications. The series emphasizes robustness and efficiency in power switching environments. The TSM4NB60CI variant specifically targets applications needing reliable performance under high voltage stress and thermal cycling conditions common in automotive electronics.
Single FETs, MOSFETs Replacement Considerations
Direct substitutes must match the 600V rating, N-channel configuration, and ITO-220 package. Verify equivalent Rds(on) and Qg values to maintain switching performance. Check if alternative manufacturers offer AEC-Q101 qualified parts with identical pinouts and thermal characteristics for seamless integration.
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