TSM6866SDCA

TSM6866SDCA

$0.60
  • Description:MOSFET 2N-CH 20V 6A 8TSSOP
  • Series:-

SKU:f76c4d2f7a01 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 20V 6A 8TSSOP
  • Series:-
  • Mfr:Taiwan Semiconductor Corporation
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel
  • FET Feature:-
  • Drain to Source Voltage (Vdss):20V
  • Current - Continuous Drain (Id) @ 25°C:6A (Ta)
  • Rds On (Max) @ Id, Vgs:30mOhm @ 6A, 4.5V
  • Vgs(th) (Max) @ Id:600mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:7nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:565pF @ 8V
  • Power - Max:1.6W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package:8-TSSOP
  • Grade:-
  • Qualification:-

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TSM6866SDCA

Overview

The TSM6866SDCA is a dual N-channel enhancement mode MOSFET manufactured by Taiwan Semiconductor Corporation. It features a silicon technology base and is housed in an 8-TSSOP surface-mount package. The device supports a drain-source voltage (Vds) of 20 V and delivers a continuous drain current (Id) of 6 A at ambient temperature. Key electrical characteristics include a maximum on-resistance (Rds(on)) of 30 mΩ at Vgs = 4.5 V, a gate threshold voltage (Vgs(th)) of 600 mV, and a total gate charge (Qg) of 7 nC at 4.5 V. The component operates within a junction temperature range of -55°C to +150°C with a power dissipation rating of 1.6 W.

Feature Summary

  • Dual N-Channel Configuration: Integrates two independent N-channel MOSFETs in a single compact package for space-efficient circuit design.
  • Low On-Resistance: Provides low Rds(on) to minimize conduction losses and improve overall power efficiency in switching applications.
  • High Thermal Stability: Supports operation up to a maximum junction temperature of +150°C for reliable performance under thermal stress.

Applications

  • DC-DC converter circuits requiring low-voltage, high-current switching capabilities.
  • Power management systems utilizing dual-channel configurations for load switching or bridge topologies.
  • Battery protection circuits where fast switching and low conduction loss are critical.

Procurement Notes

Verify the current lifecycle status before procurement, as the component is listed as Not Recommended for New Designs (NRND) or obsolete in certain distributor databases. Confirm RoHS compliance details directly with the manufacturer or authorized suppliers, as regulatory status may vary by production batch. Ensure that the 8-TSSOP package dimensions match the target PCB footprint requirements during the sourcing phase.

Selection Notes

Select this component for designs requiring a 20V voltage rating and dual N-channel topology in a small outline package. Evaluate the 30 mΩ Rds(on) specification against the specific load current requirements to ensure thermal limits are not exceeded. Consider the 7 nC gate charge for driving capability requirements in the control circuitry. Verify that the -55°C to +150°C operating range aligns with the environmental conditions of the intended application.

Part Context

The TSM6866SDCA belongs to the TSM6866 series of dual N-channel MOSFETs from Taiwan Semiconductor. This series is designed for general-purpose switching applications in consumer electronics and industrial equipment. The SDCA suffix typically denotes the specific tape-and-reel packaging configuration for automated assembly processes.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Due to the NRND/obsolete status, engineers should consult the manufacturer's official obsolescence notices or contact technical support for recommended alternative components with equivalent electrical specifications and pin compatibility.

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