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Product Detailed Parameters
- Description：MOSFET 2N-CH 20V 6.5A 8TSSOP
- Series：-
- Mfr：Taiwan Semiconductor Corporation
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：6.5A (Ta)
- Rds On (Max) @ Id, Vgs：22mOhm @ 6.5A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：15nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：950pF @ 10V
- Power - Max：1.04W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package：8-TSSOP
- Grade：-
- Qualification：-
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Overview
The TSM6968SDCA RVG is a dual N-channel MOSFET manufactured by Taiwan Semiconductor Corporation. It features a silicon technology base and is housed in an 8-TSSOP surface-mount package. The device supports a drain-source voltage (Vds) of 20 V and delivers a continuous drain current (Id) of 6.5 A at ambient temperature. Key electrical parameters include a maximum on-resistance (Rds(on)) of 15 mΩ at 4.5 V gate drive, with a threshold voltage (Vgs(th)) of 600 mV. The total power dissipation is rated at 1.04 W, and the component operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- Dual N-channel configuration for space-efficient circuit design
- Integrated ESD protection mechanisms
- Low on-resistance characteristics for efficient power switching
Applications
- DC-DC converter circuits
- Load switch applications
- Power management modules
Procurement Notes
Verify the specific ordering suffix 'RVG' against official manufacturer documentation to confirm tape-and-reel specifications. Confirm RoHS compliance status through the latest datasheet. Check supply status as some listings indicate non-recommended new design or obsolete classifications. Ensure the source document explicitly identifies Taiwan Semiconductor as the manufacturer rather than a distributor.
Selection Notes
Select this component for low-voltage applications requiring dual N-channel isolation in a compact SMD footprint. Verify that the 20 V rating and 6.5 A current capacity meet the specific load requirements. Consider the thermal performance given the 1.04 W power dissipation limit in the TSSOP-8 package. Confirm compatibility with standard logic-level gate drive voltages around 4.5 V to 10 V.
Part Context
This part belongs to the Taiwan Semiconductor MOSFET array category. It is distinct from other series such as the TSM6968DCA which may differ in packaging or specific electrical tolerances. The product line focuses on general-purpose switching applications utilizing silicon planar technology.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided data. Cross-reference with the manufacturer's official replacement guide if existing inventory requires migration.
