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Product Detailed Parameters
- Description：MOSFET 2P-CH 30V 2.5A 8TSST
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：-
- Configuration：2 P-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：2.5A
- Rds On (Max) @ Id, Vgs：84mOhm @ 2.5A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：4.8nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds：460pF @ 15V
- Power - Max：1.25W
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SMD, Flat Leads
- Supplier Device Package：8-TSST
- Grade：-
- Qualification：-
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Overview
The TT8J3TR is a dual P-channel MOSFET manufactured by Rohm Semiconductor, designed for mid-power switching applications. It features a -30V drain-source voltage and a continuous drain current of -2.5A. The device offers low on-resistance, specified as 0.115 ohms at VGS = 4V and 0.095 ohms at VGS = 4.5V. It operates with a drive voltage of -4V and has a total gate charge of 4.8nC. Power dissipation is rated at 1.25W. The component is housed in an 8-pin TSST8 surface-mount package measuring 1.9x3.0mm with a thickness of 0.85mm.
Feature Summary
- Dual P-channel configuration for efficient power switching
- Low on-resistance optimized for 4V drive signals
- Compact TSST8 surface-mount package design
- Lead-free construction compliant with RoHS standards
Applications
- Power supply circuits
- Battery protection systems
- Motor driver interfaces
Procurement Notes
The TT8J3TR is officially classified as obsolete or manufacturing discontinued by Rohm Semiconductor. This status indicates that the component is no longer available for new design-in projects. Existing customers may still source remaining stock from authorized distributors, but future production runs cannot be guaranteed. Engineers should verify availability through official channels before finalizing designs, as supply continuity is not assured for this specific part number.
Selection Notes
Select the TT8J3TR only for legacy system maintenance or direct replacement scenarios where the original design specifications are fixed. Its primary advantage lies in its compatibility with 4V logic levels, offering lower on-resistance compared to standard 10V drive devices. Ensure the application requires a dual P-channel topology within the TSST8 footprint. Verify that the thermal requirements align with the 1.25W power dissipation rating in the target PCB layout.
Part Context
This component belongs to Rohm's series of dual P-channel MOSFETs designed for mid-power applications. It shares similar packaging and functional characteristics with related models like the TT8J2, which also supports 4V drive voltages. The TSST8 package allows for space-constrained designs while maintaining adequate thermal performance for switching duties. It represents a specialized solution for applications requiring synchronized control of two P-channel paths.
Replacement Considerations
Publicly confirmed substitute part numbers are not explicitly listed in the provided documentation. As the TT8J3TR is obsolete, engineers must evaluate alternative dual P-channel MOSFETs with compatible -30V ratings, similar current capabilities, and matching TSST8 footprints. Cross-referencing electrical parameters such as RDS(on) and gate charge is essential when selecting a modern equivalent.
