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Product Detailed Parameters
- Description：MOSFET N/P-CH 20V 2.5A 8TSST
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：Logic Level Gate, 1.5V Drive
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：2.5A, 2.4A
- Rds On (Max) @ Id, Vgs：72mOhm @ 2.5A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：3.6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：260pF @ 10V
- Power - Max：1W
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SMD, Flat Leads
- Supplier Device Package：8-TSST
- Grade：-
- Qualification：-
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Overview
The TT8M3TR is a complementary MOSFET pair manufactured by ROHM Semiconductor, integrating N-channel and P-channel devices within a single TSST-8 surface-mount package. The component supports low-voltage operation with a specified drive voltage of 1.5V. It features a Drain-Source Voltage (V_DSS) rating of 20V and a continuous Drain Current (I_D) of 2.5A. Typical on-resistance (R_DS(on)) values are 0.1Ω at V_GS = 1.5V and 0.065Ω at V_GS = 2.5V. The total gate charge (Q_g) is 3.6nC, and power dissipation (P_D) is rated at 1.25W. The device operates within a storage temperature range of -55°C to 150°C and complies with RoHS standards.
Feature Summary
- Low voltage 1.5V drive type for efficient control
- Complementary N+P configuration in a compact form factor
- Small surface mount TSST-8 package design
Applications
- Low voltage power switching circuits
- Battery-powered portable electronic devices
- DC-DC converter output stages
Procurement Notes
The TT8M3TR is classified as End-of-Life or manufacturing discontinued status. Verification of current availability requires direct consultation with authorized distributors or the manufacturer. Sourcing should focus on existing stock or alternative components due to the confirmed discontinuation status.
Selection Notes
Select this component for applications requiring a complementary MOSFET pair driven by low logic levels around 1.5V. Ensure the design accommodates the 20V drain-source voltage limit and 2.5A current capacity. Verify thermal management requirements against the 1.25W power dissipation rating in the TSST-8 package.
Part Context
This part belongs to the TT8 series of complementary MOSFETs from ROHM Semiconductor. It shares the TSST-8 package format with related models like the TT8M2, which offers different voltage ratings and drive characteristics. The series targets space-constrained designs needing integrated N/P channel solutions.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Designers should evaluate other complementary MOSFETs with similar 1.5V drive capabilities and TSST-8 packaging if replacement is necessary.
