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The TXDV812RG is a high-voltage Triac from the TXDVxx12 series, utilizing alternistor technology for power control in three-phase grids. It features an on-state current of 12 A and a maximum blocking voltage of 800 V. The device supports a gate trigger current up to 100 mA and offers commutation capability up to 42.5 A/ms at 10 V/µs. Noise immunity reaches 2 kV/µs, while the insulated package provides 2,500 V rms isolation. Operating junction temperature ranges from -40 °C to +125 °C.
Verify the specific ordering code TXDV812RG against official STMicroelectronics documentation to confirm the 800 V rating and tube delivery mode. Ensure that the TO-220AB insulated package dimensions and recommended mounting torque align with the system design requirements before finalizing procurement.
Select this component when designing circuits requiring robust performance in three-phase power grids with inductive or resistive loads. The 800 V blocking voltage suits applications where lower voltage ratings than the 1200 V variant are sufficient. Consider the thermal resistance values and case temperature limits to ensure reliable operation within the specified industrial temperature range.
This part belongs to the TXDVxx12 series of 12 A high-voltage Triacs manufactured by STMicroelectronics. The series includes variants with different blocking voltages, such as the TXDV1212RG which offers 1200 V. All devices share the same alternistor technology and physical package specifications.
The TXDV1212RG serves as a direct substitute within the same series, offering identical current ratings but with a higher 1200 V blocking voltage. Verify that the increased voltage rating does not impact cost or availability constraints in the target application.
For a pulse duration of 2.5 ms at an initial junction temperature of 25 °C, the maximum non-repetitive surge peak on-state current is 170 A.
The insulation rms voltage is 2,500 V, measured between the A1, A2, and gate terminals to the case for one minute.
The critical rate of rise of on-state current (dI/dt)c is 100 A/µs, tested with a gate current of 500 mA and a gate current rise rate of 1 A/µs at 50 Hz.