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Product Detailed Parameters
- Description：DGTL ISO 5.7KV 1CH GT DVR 16SOIC
- Series：-
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：Capacitive Coupling
- Number of Channels：1
- Voltage - Isolation：5700Vrms
- Propagation Delay tpLH / tpHL (Max)：130ns, 130ns
- Pulse Width Distortion (Max)：30ns
- Rise / Fall Time (Typ)：33ns, 27ns
- Current - Output High, Low：10A, 10A
- Current - Peak Output：10A
- Voltage - Forward (Vf) (Typ)：-
- Voltage - Output Supply：13V ~ 33V
- Grade：Automotive
- Qualification：AEC-Q100
- Operating Temperature：-40°C ~ 125°C
- Mounting Type：Surface Mount
- Package / Case：16-SOIC (0.295", 7.50mm Width)
- Supplier Device Package：16-SOIC
- Common Mode Transient Immunity (Min)：150V/ns
- Approval Agency：UL, VDE
- Current - DC Forward (If) (Max)：-
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Overview
The UCC21710QDWRQ1 is a single-channel galvanically isolated gate driver from Texas Instruments, designed for automotive applications. It supports SiC MOSFETs and IGBTs up to 1700V. Key electrical parameters include a 5.7kVrms isolation voltage, 10A source/sink output current, and a supply voltage range of 3V to 33V. The device features a maximum propagation delay of 130ns, with rise and fall times of 33ns and 27ns respectively. It operates within a temperature range of -40°C to +125°C and is housed in an SOIC-16 package.
Feature Summary
- Provides high-voltage galvanic isolation for safe driving of wide-bandgap semiconductors
- Integrates advanced protection mechanisms including desaturation detection and latch-down
- Supports both inverting and non-inverting logic configurations
Applications
- Automotive traction inverters
- On-board chargers (OBC)
- DC-DC converters for electric vehicles
Procurement Notes
Verify the Q1 suffix confirms AEC-Q100 automotive qualification status. Ensure the DWR suffix matches the required SOIC-16 surface-mount package. Confirm RoHS compliance details as specified in the manufacturer's documentation. Validate that the component meets specific humidity sensitivity level requirements for your assembly process.
Selection Notes
Select this driver when driving SiC MOSFETs or IGBTs requiring up to 1700V blocking capability. Choose based on the need for high CMTI and integrated desaturation protection. Consider the 10A peak drive strength for fast switching applications. Verify compatibility with the system's isolation voltage requirements and operating temperature range.
Part Context
This component belongs to the UCC2171x-Q1 family of isolated gate drivers. It shares architectural similarities with other members like the UCC21711 and UCC21717 but differs in specific protection features and pinout configurations. It is part of Texas Instruments' portfolio focused on power management ICs for electric vehicle powertrains.
Replacement Considerations
Publicly confirmed substitutes include UCC21711QDWRQ1 and UCC21717QDWRQ1. Verify pin-to-pin compatibility and check if specific protection features like desaturation detection are present in the alternative part before substitution.
