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The UCC21736QDWQ1 is an automotive-grade, single-channel galvanically isolated gate driver designed for IGBT and SiC MOSFET applications. It provides a peak output current of +/-10 A with a maximum propagation delay of 130 ns. The device features rise and fall times of 28 ns and 24 ns respectively. It operates within a supply voltage range of 3 V to 5.5 V and supports both inverting and non-inverting configurations. The component offers 5.7 kVrms isolation and functions reliably between -40°C and +125°C.
Verify the specific suffix 'DWQ1' against official Texas Instruments documentation to confirm package type and qualification status. Ensure compatibility with AEC-Q100 requirements for your target automotive application. Cross-reference datasheet revisions to validate pinout and electrical characteristics before finalizing procurement orders.
Select this component when high-voltage isolation and active short-circuit protection are required for silicon carbide or IGBT switches. The dual-output configuration simplifies layout compared to separate drivers. Verify that the 5.7 kVrms isolation rating meets system creepage and clearance requirements for the intended operating voltage levels.
This part belongs to the UCC217xx family of isolated gate drivers from Texas Instruments. It shares architectural similarities with other members like the UCC21759 but differs in isolation voltage ratings and specific protection features. The Q1 suffix indicates automotive qualification, distinguishing it from standard industrial variants.
Publicly confirmed substitute part numbers are not available in the provided source material.