UCC21750QDWQ1

UCC21750QDWQ1

$7.75
  • Description:DGTL ISO 5.7KV 1CH GT DVR 16SOIC
  • Series:-
  • Mfr:Texas Instruments
  • Package:Tray

SKU:90e586e5f036 Category: Brand:

  
  • Quantity
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Product Detailed Parameters

  • Description:DGTL ISO 5.7KV 1CH GT DVR 16SOIC
  • Series:-
  • Mfr:Texas Instruments
  • Package:Tray
  • Technology:Capacitive Coupling
  • Number of Channels:1
  • Voltage - Isolation:5700Vrms
  • Propagation Delay tpLH / tpHL (Max):130ns, 130ns
  • Pulse Width Distortion (Max):30ns
  • Rise / Fall Time (Typ):33ns, 27ns
  • Current - Output High, Low:-
  • Current - Peak Output:10A
  • Voltage - Forward (Vf) (Typ):-
  • Voltage - Output Supply:13V ~ 33V
  • Grade:Automotive
  • Qualification:AEC-Q100
  • Operating Temperature:-40°C ~ 125°C
  • Mounting Type:Surface Mount
  • Package / Case:16-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package:16-SOIC
  • Common Mode Transient Immunity (Min):150V/ns
  • Approval Agency:CQC, CSA, TUV, UL, VDE
  • Current - DC Forward (If) (Max):-

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UCC21750QDWQ1

Overview

The UCC21750QDWQ1 is a reinforced isolated single-channel gate driver designed for silicon carbide (SiC) MOSFETs and IGBTs with operating voltages up to 2121 V DC. It features a 5.7 kVrms isolation rating and provides ±10 A source/sink peak current. The device integrates active protection mechanisms, including desaturation detection and latch-down, alongside isolated analog sensing capabilities. It supports high common-mode transient immunity and operates within an extended temperature range of -40°C to +150°C.

Feature Summary

  • Reinforced galvanic isolation rated at 5.7 kVrms for robust noise immunity in high-voltage environments
  • Integrated active protection functions including desaturation detection and latch-down for enhanced system safety
  • Supports isolated analog sensing to enable direct monitoring of power stage conditions without external components

Applications

  • Gate driving for Silicon Carbide (SiC) MOSFETs in high-frequency power conversion systems
  • Isolated control interfaces for Insulated Gate Bipolar Transistors (IGBTs)
  • Automotive traction inverters and on-board chargers requiring automotive-grade reliability

Procurement Notes

Verify the Q1 suffix confirms automotive qualification status against the latest Texas Instruments datasheet. Confirm the DWQ1 package variant matches your PCB footprint requirements. Check for end-of-life notifications or obsolescence warnings, as availability may be restricted. Ensure supply chain sources provide valid traceability documentation for automotive applications.

Selection Notes

Select this component when high voltage isolation and SiC compatibility are required. The integrated desaturation protection reduces the need for external fault detection circuitry. Consider the SOIC-16 package constraints for thermal management. Verify that the 5.7 kVrms isolation rating meets the specific creepage and clearance requirements of the target application design.

Part Context

This part belongs to the UCC2175x family of isolated gate drivers from Texas Instruments. It shares functional similarities with other members like the UCC21751 but differs in specific configuration options and packaging. The Q1 designation indicates compliance with automotive quality standards, distinguishing it from commercial variants.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation.

UCC21750QDWQ1UCC21750QDWQ1
$7.75
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