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The UCC21750QDWQ1 is a reinforced isolated single-channel gate driver designed for silicon carbide (SiC) MOSFETs and IGBTs with operating voltages up to 2121 V DC. It features a 5.7 kVrms isolation rating and provides ±10 A source/sink peak current. The device integrates active protection mechanisms, including desaturation detection and latch-down, alongside isolated analog sensing capabilities. It supports high common-mode transient immunity and operates within an extended temperature range of -40°C to +150°C.
Verify the Q1 suffix confirms automotive qualification status against the latest Texas Instruments datasheet. Confirm the DWQ1 package variant matches your PCB footprint requirements. Check for end-of-life notifications or obsolescence warnings, as availability may be restricted. Ensure supply chain sources provide valid traceability documentation for automotive applications.
Select this component when high voltage isolation and SiC compatibility are required. The integrated desaturation protection reduces the need for external fault detection circuitry. Consider the SOIC-16 package constraints for thermal management. Verify that the 5.7 kVrms isolation rating meets the specific creepage and clearance requirements of the target application design.
This part belongs to the UCC2175x family of isolated gate drivers from Texas Instruments. It shares functional similarities with other members like the UCC21751 but differs in specific configuration options and packaging. The Q1 designation indicates compliance with automotive quality standards, distinguishing it from commercial variants.
Publicly confirmed substitute part numbers are not available in the provided documentation.