UCC23313BQDWYQ1

UCC23313BQDWYQ1

  • Description:DGTL ISO 3.75KV 1CH GT DVR 6SOIC
  • Series:Functional Safety (FuSa)
  • Mfr:Texas Instruments
  • Package:Tube

SKU:cd2d94bb1fcc Category: Brand:

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Product Detailed Parameters

  • Description:DGTL ISO 3.75KV 1CH GT DVR 6SOIC
  • Series:Functional Safety (FuSa)
  • Mfr:Texas Instruments
  • Package:Tube
  • Technology:Capacitive Coupling
  • Number of Channels:1
  • Voltage - Isolation:3750Vrms
  • Propagation Delay tpLH / tpHL (Max):105ns, 105ns
  • Pulse Width Distortion (Max):35ns
  • Rise / Fall Time (Typ):28ns, 25ns (Max)
  • Current - Output High, Low:3A, 3.5A
  • Current - Peak Output:4.5A, 5.3A
  • Voltage - Forward (Vf) (Typ):2.1V
  • Voltage - Output Supply:14V ~ 33V
  • Grade:Automotive
  • Qualification:AEC-Q100
  • Operating Temperature:-40°C ~ 125°C
  • Mounting Type:Surface Mount
  • Package / Case:6-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package:6-SOIC
  • Common Mode Transient Immunity (Min):150kV/µs
  • Approval Agency:UL, VDE
  • Current - DC Forward (If) (Max):25 mA

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UCC23313BQDWYQ1

Overview

The UCC23313BQDWYQ1 is an automotive-grade, single-channel optically isolated gate driver designed for high-voltage power switching applications. It features a 3.75 kVRMS basic isolation rating and supports SiC MOSFETs with a 4 A source and 5 A sink output current capability. The device operates within a supply voltage range of 15 V to 30 V and functions across a temperature range of -40°C to +125°C. Key electrical parameters include a maximum propagation delay of 105 ns, a rise time of 28 ns, and a fall time of 25 ns. It is housed in a SOIC-6 package with a power dissipation rating of 750 mW.

Feature Summary

  • Provides robust 3.75 kVRMS basic isolation for safe operation in high-voltage environments.
  • Delivers strong drive strength with 4 A source and 5 A sink currents suitable for wide-bandgap semiconductors.
  • Features fast switching performance with low propagation delay and transition times.
  • Designed for automotive reliability with extended operating temperature ranges.

Applications

  • Silicon Carbide (SiC) MOSFET gate driving in electric vehicle inverters
  • High-frequency DC-DC converters requiring galvanic isolation
  • Industrial motor drives and traction systems

Procurement Notes

Verify the specific suffix 'Q1' confirms automotive qualification status against the latest Texas Instruments datasheet. Ensure the SOIC-6 package variant matches your PCB footprint requirements. Confirm humidity sensitivity classification and reflow soldering profile compliance prior to assembly. Cross-reference the manufacturer part number with authorized distributors to ensure authenticity and traceability.

Selection Notes

Select this component when high isolation voltage and fast switching are required for SiC-based designs. The single-channel configuration simplifies layout compared to dual-channel alternatives. Consider the 15 V to 30 V supply range compatibility with standard bootstrap or isolated power supplies. Evaluate the thermal performance given the 750 mW dissipation limit in the SOIC-6 package.

Part Context

This device belongs to the UCC23313 family of optically isolated gate drivers from Texas Instruments. It serves as a bridge between low-voltage control logic and high-voltage power stages. The Q1 designation indicates it meets automotive quality standards, distinguishing it from commercial variants within the same functional family.

Replacement Considerations

The UCC23313BQDWYRQ1 is a reel-packaged version of the same core device. Verify pinout and electrical specifications match before substitution. No other direct cross-model replacements are confirmed in the provided documentation.

UCC23313BQDWYQ1UCC23313BQDWYQ1

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