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The UCC27288DR is a robust N-channel MOSFET gate driver from Texas Instruments, designed for half-bridge and synchronous buck topologies. It features a high-side/low-side configuration capable of driving two N-channel MOSFETs with a maximum switch node (HS) rating of 100V. The device delivers a peak sink current of 3.5A and a peak source current of 2.5A. Typical propagation delay is 16ns, with rise and fall times of 12ns and 10ns respectively under an 1800pF load. It operates within a supply voltage range of 8V to 16V and supports temperatures from -40°C to +150°C in an SOIC-8 package.
Verify the specific suffix DR indicates the SOIC-8 surface-mount package variant. Confirm RoHS compliance status through official manufacturer documentation prior to integration. Ensure the selected component matches the required thermal and electrical specifications for the target application environment.
Select this driver for applications requiring independent high-side and low-side control with robust transient immunity. The wide operating temperature range and negative voltage tolerance make it suitable for harsh industrial environments. Verify that the external bootstrap diode selection aligns with the switching frequency and voltage requirements.
This component belongs to the UCC2728x series of gate drivers, which are optimized for driving N-channel MOSFETs. The series emphasizes robustness and flexibility, featuring independent inputs and configurable external bootstrap diodes to support various power topology designs.
UCC27288DRCR