UCC5390ECDWV

UCC5390ECDWV

$2.92
  • Description:DGTL ISO 3KV 1CH GATE DVR 8SOIC
  • Series:-
  • Mfr:Texas Instruments
  • Package:Tube

SKU:adc43d9246b3 Category: Brand:

  
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Product Detailed Parameters

  • Description:DGTL ISO 3KV 1CH GATE DVR 8SOIC
  • Series:-
  • Mfr:Texas Instruments
  • Package:Tube
  • Technology:Capacitive Coupling
  • Number of Channels:1
  • Voltage - Isolation:3000Vrms
  • Propagation Delay tpLH / tpHL (Max):100ns, 100ns
  • Pulse Width Distortion (Max):20ns
  • Rise / Fall Time (Typ):10ns, 10ns
  • Current - Output High, Low:10A, 10A
  • Current - Peak Output:-
  • Voltage - Forward (Vf) (Typ):-
  • Voltage - Output Supply:13.2V ~ 33V
  • Grade:-
  • Qualification:-
  • Operating Temperature:-40°C ~ 125°C
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package:8-SOIC
  • Common Mode Transient Immunity (Min):100kV/µs
  • Approval Agency:CQC, CSA, UR, VDE
  • Current - DC Forward (If) (Max):-

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UCC5390ECDWV

Overview

The UCC5390ECDWV is a single-channel isolated gate driver from Texas Instruments, designed for high-performance power conversion applications. It features a 5.0-kVRMS isolation rating and provides robust galvanic separation between input and output sides. The device delivers a peak output current of 10 A source and 10 A sink, enabling efficient driving of wide-bandgap semiconductors such as SiC MOSFETs and GaN HEMTs. Key electrical parameters include a maximum propagation delay of 100 ns, rise and fall times of 10 ns each, and a common-mode transient immunity (CMTI) of 100 kV/µs. It operates with an output supply voltage range of 13.2 V to 33 V and supports both inverting and non-inverting logic configurations.

Feature Summary

  • Provides 5.0-kVRMS reinforced insulation for safe galvanic isolation in high-voltage systems
  • Delivers high peak drive current of 10 A source and sink for fast switching of power devices
  • Features ultra-low propagation delay and symmetric rise/fall times for precise pulse-width control
  • Offers high common-mode transient immunity to prevent false triggering in noisy environments

Applications

  • Silicon Carbide (SiC) MOSFET gate driving in industrial inverters and motor drives
  • Gallium Nitride (GaN) HEMT switching in high-efficiency DC-DC converters
  • Isolated gate driving in solar microinverters and string inverters
  • High-frequency resonant converter topologies requiring precise timing control

Procurement Notes

Verify the specific suffix (e.g., ECDWV vs. ECDWVR) to confirm package type and reel quantity. Ensure the design supports the required isolation voltage ratings per IEC standards. Confirm that the PCB layout accommodates the SOIC-8 package dimensions and thermal requirements. Check for updated PCNs regarding assembly sites or marking changes before finalizing procurement.

Selection Notes

Select this component when high CMTI and low propagation delay are critical for system reliability. Compare against other UCC53x0 family members if different isolation ratings or pinouts are needed. Ensure the output supply voltage range matches the target gate drive requirements. Consider the SOIC-8 package for space-constrained designs requiring surface-mount assembly.

Part Context

The UCC5390ECDWV belongs to the UCC53xxDWV family of single-channel isolated gate drivers. It is part of Texas Instruments' portfolio focused on enabling next-generation power electronics using wide-bandgap devices. The family shares similar architectural features but varies in isolation ratings and packaging options to suit diverse application needs.

Replacement Considerations

Direct substitutes within the same family include UCC5390ECDWVR (tape and reel version). For alternative isolation technologies, consider capacitive or magnetic isolators with comparable CMTI and drive strength. Verify pin compatibility and isolation voltage ratings when cross-referencing with competitors.

UCC5390ECDWVUCC5390ECDWV
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