UF3N170400B7S

Overview

The UF3N170400B7S is a Silicon Carbide (SiC) JFET manufactured by onsemi. It features an N-channel configuration with a drain-source voltage rating of 1700 V and a typical on-state resistance of 400 mΩ. The device operates within a junction temperature range of -55°C to 175°C and utilizes a D2PAK-7 surface-mount package.

Feature Summary

• Normally-on operation at VGS=0V for simplified current protection circuits
• Ultra-low on-state resistance enabling low conduction losses
• Low gate charge and intrinsic capacitance for reduced switching losses
• Temperature-independent fast switching characteristics

Applications

• Current protection circuits requiring no active control
• Cascode operation configurations
• High-voltage power conversion systems

Procurement Notes

Verify the manufacturer designation carefully, as this component is associated with Qorvo branding in some documentation while listed under onsemi part numbers in others. Confirm the specific datasheet version and assembly notices prior to integration to ensure compliance with current manufacturing standards.

Selection Notes

Select this component for applications necessitating normally-on behavior without external gate drive biasing. The low RDS(on) and capacitive parameters make it suitable for high-efficiency topologies where cascode arrangements are employed to manage high-voltage switching requirements.

Part Context

This device belongs to the Gen 3 SiC JFET family. It shares architectural similarities with other models like the UJ3N series but is distinguished by its 1700 V rating and 400 mΩ resistance profile, targeting high-power industrial and energy infrastructure markets.

Replacement Considerations

Direct substitutes include the UJ3N120065K3S and UJ3N120070K3S for lower voltage applications. For equivalent 1700 V performance, verify compatibility with the UF3C170400B7S, noting potential differences in channel type or package pinout.