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Product Detailed Parameters
- Description：JFET N-CH 650V 85A TO247-3
- Series：-
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Voltage - Breakdown (V(BR)GSS)：650 V
- Drain to Source Voltage (Vdss)：650 V
- Current - Drain (Idss) @ Vds (Vgs=0)：-
- Current Drain (Id) - Max：85 A
- Voltage - Cutoff (VGS off) @ Id：-
- Input Capacitance (Ciss) (Max) @ Vds：2360pF @ 100V
- Resistance - RDS(On)：33 mOhms
- Power - Max：441 W
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247-3
- Grade：-
- Qualification：-
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Overview
The UJ3N065025K3S is a silicon carbide (SiC) JFET manufactured by onsemi, designed for high-power applications. It features an N-channel configuration in a TO-247-3 through-hole package. Key electrical specifications include a drain-source breakdown voltage of 650 V and a gate-source breakdown voltage of 20 V. The device supports a continuous drain current of 85 A with a maximum on-resistance of 25 mΩ. It operates within a temperature range of -55°C to +175°C and has a power dissipation rating of 441 W. The component is AEC-Q101 qualified.
Feature Summary
- Utilizes silicon carbide technology for enhanced thermal performance and efficiency
- Provides robust switching capabilities with low on-resistance characteristics
- Qualified for automotive reliability standards under AEC-Q101
Applications
- Automotive power electronics systems
- High-efficiency DC-DC converters
- Industrial motor drives
Procurement Notes
Verify the specific ordering suffix K3S against official datasheets to confirm package type and tape/reel or tube packaging details. Ensure compatibility with existing PCB footprints for the TO-247-3 form factor. Cross-reference the AEC-Q101 qualification status if the application requires automotive-grade certification. Confirm that the 20 V gate-source limit aligns with the system's drive circuitry constraints.
Selection Notes
Select this component when designing circuits requiring high voltage tolerance and low conduction losses in a single-switch configuration. The SiC material offers superior thermal conductivity compared to traditional silicon devices. Consider the 85 A current rating and 25 mΩ resistance for efficiency calculations. The TO-247-3 package facilitates effective heat sinking for high-power density designs.
Part Context
This part belongs to the UJ3N series of silicon carbide JFETs from onsemi. These devices are engineered to replace traditional silicon MOSFETs in high-frequency and high-temperature environments. The series emphasizes reduced switching losses and improved thermal stability, making it suitable for next-generation power conversion architectures.
Replacement Considerations
Direct substitutes may include other 650V SiC JFETs from different manufacturers, but pinout and parameter matching must be verified. Compare on-resistance and current ratings closely. Note that JFETs require negative bias for turn-off, unlike enhancement-mode MOSFETs, which necessitates driver circuit adjustments.
