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The ULN2003AID is a high-voltage, high-current Darlington transistor array manufactured by Texas Instruments. It contains seven open-collector NPN Darlington pairs with common emitters. Each channel supports a maximum continuous collector current of 500 mA and withstands peak currents up to 600 mA. The device operates with a maximum collector-emitter voltage (Vceo) of 50 V and features integrated suppression diodes for inductive load driving. It is housed in a 16-pin Small Outline Package (SO-16). Inputs are pinned opposite outputs to simplify board layout. The series includes internal base resistors compatible with 5 V TTL and CMOS logic families.
Verify the specific manufacturer source and date code upon ordering. Confirm that the SO-16 package variant matches the required PCB footprint. Ensure the component meets the necessary environmental specifications for the intended operating temperature range before finalizing procurement.
Select this part when seven independent high-current switching channels are required in a compact surface-mount format. Verify input logic voltage compatibility, as the internal base resistors are optimized for 5 V operation. Consider thermal dissipation requirements if paralleling outputs for higher current loads.
This component belongs to the ULN200xA family of high-voltage Darlington arrays. It shares functional similarities with the ULN2003AN through-hole variant but utilizes an SO-16 surface-mount package. The 'D' suffix indicates the small outline package configuration, while 'A' denotes the specific resistor network version compatible with 5 V logic inputs.
The COM pin connects to the common cathode of the integrated suppression diodes. It must be connected to the supply voltage of the inductive load to provide a path for back-EMF current.
Yes, multiple output channels can be paralleled to increase the total available current capacity beyond the single-channel rating of 500 mA.
It interfaces directly with 5 V TTL and CMOS logic outputs from microcontrollers without requiring external base resistors due to the internal 2.7 kΩ resistors.