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UM6606A is listed in the RF Diode range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is RF DIODE PIN 800V 6W AXIAL. Review the specifications below when checking this part for your BOM.
The UM6606A is a silicon PIN diode manufactured by Microchip Technology, designed for high-frequency applications up to 2 GHz. It features a hermetic MELF package with SMD/SMT mounting style. Key electrical parameters include a maximum reverse voltage of 800 V, a maximum forward current of 100 mA, and a maximum series resistance of 2.5 Ohms at mid-frequency. The device has a maximum diode capacitance of 400 fF, a reverse current of 10 uA, and a power dissipation rating of 4.5 W. It operates with a carrier lifetime of 1 us and is configured as a single unit.
Verify the specific suffix 'A' against the official Microchip datasheet to confirm pinout and electrical tolerances differ from standard variants. Confirm RoHS compliance status as indicated in product specifications. Check for active production status or obsolescence notices via manufacturer channels before finalizing procurement plans.
Select this component when high isolation and low insertion loss are required in RF paths. Ensure the operating frequency does not exceed 2 GHz. Verify that the 800 V reverse voltage rating meets the circuit's peak inverse voltage requirements. Consider the 4.5 W power dissipation limit for thermal management in the final assembly.
This part belongs to the Microchip Technology PIN diode family, specifically within the Si PPIN Hermetic MELF category. It is distinct from non-hermetic surface mount diodes and general-purpose rectifiers. The UM6606 series is engineered for robust performance in demanding electronic environments requiring reliable RF control.
Publicly confirmed substitute part numbers for the UM6606A are not available in the provided reference data. Consult Microchip Technology directly for qualified alternatives or cross-reference lists.
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