UM7104B

RF Diode Overview

The UM7104B is a silicon PIN diode manufactured by Microchip Technology, designed for high-power applications. It features a hermetic glass axial package configuration. Key electrical specifications include a maximum reverse voltage of 400 V and a maximum diode capacitance of 1.2 pF. The device exhibits a maximum series resistance of 600 mOhms at maximum intermediate frequency and a reverse current of 10 uA. It operates within a temperature range from -65 C to +175 C, with a carrier lifetime of 2 us.

RF Diode Feature Summary

• Hermetic sealing in a glass axial package ensures reliability in harsh environments.
• High reverse voltage capability suitable for demanding power switching applications.
• Wide operating temperature range supports extreme thermal conditions.

RF Diode Applications

• High-power RF switching circuits
• Attenuator modules requiring hermetic protection
• Microwave phase shifters

RF Diode Procurement Notes

Verify the specific suffix 'B' against official Microchip documentation to confirm exact mechanical dimensions and lead finish, as suffixes often denote packaging or material variations. Confirm RoHS compliance status directly with the manufacturer, as hermetic variants may differ from standard commercial lines. Request the latest datasheet revision to ensure alignment with current manufacturing specifications before finalizing procurement orders.

RF Diode Selection Notes

Select the UM7104B when a hermetically sealed PIN diode with 400 V reverse voltage rating is required. Ensure the application demands the specified 1.2 pF capacitance and 600 mOhm series resistance limits. Verify that the operating environment falls within the -65 C to +175 C range. Compare against similar models like the UM7104F if MELF packaging is preferred over glass axial.

RF Diode Part Context

The UM7104B belongs to Microchip's high-power PIN diode family, which includes variants such as the UM7104F and UM7108F. These components are engineered for robust performance in RF and microwave systems. The UM7104B specifically utilizes a glass axial hermetic package, distinguishing it from surface-mount alternatives while sharing core silicon technology and electrical characteristics with its siblings.

RF Diode Replacement Considerations

The UM7104F is a confirmed substitute within the same product family, offering identical electrical parameters but in a MELF package. The UM7108F provides higher reverse voltage (800 V) with similar capacitance and resistance specs. Verify pin compatibility and thermal management requirements when substituting between axial and MELF packages.