UM7501F

RF Diode Overview

The UM7501F is a high-power PIN diode from the UM7500 series, manufactured by Microchip Technology. It features a silicon construction with a hermetic fused-in-glass package designed for reliable RF and microwave applications. The device supports a reverse voltage rating of 100V at 0.5 µA leakage current. Key electrical parameters include a total capacitance of 1.0 pF maximum at 100V and 1 MHz, and a series resistance of 1.0 Ohm maximum at 50 mA forward current and 100 MHz. Power dissipation capabilities vary by package style, reaching up to 10 W in Style A and C configurations. The operating temperature range spans from -65°C to +175°C.

RF Diode Feature Summary

• Metallurgically bonded, fused-in-glass construction ensures voidless, particle-free reliability suitable for high-power environments.
• Low leakage distortion achieved through high carrier lifetime maintenance and precise I-region thickness control.
• Compatible with automatic insertion equipment and available in various surface mount and stud packages.

RF Diode Applications

• RF and microwave switch circuits
• Attenuator circuits
• High-end medical equipment such as MRI and CAT scan systems

RF Diode Procurement Notes

Verify component authenticity and datasheet revisions before integration. Confirm package style availability as specifications may differ between manufacturing sites. Check for product change notifications regarding assembly or labeling updates. Ensure compliance with relevant environmental standards if required for the specific deployment environment.

RF Diode Selection Notes

Select the UM7501F when a 100V reverse voltage rating is required for high-power switching or attenuation tasks. Consider the specific thermal management needs based on the chosen package style, as power dissipation ratings vary significantly between stud and surface mount options. Verify that the hermetic seal meets the environmental protection requirements of the target application.

RF Diode Part Context

The UM7501F belongs to the UM7500 series of power PIN diodes originally developed by Microsemi, now part of Microchip Technology. This series utilizes innovative passivated chip designs with silicon wafer bonding techniques. The family includes variants with higher voltage ratings, such as the UM7504F (400V) and UM7510C (1000V), offering scalable solutions for different RF power handling requirements.

RF Diode Replacement Considerations

Publicly confirmed substitute part numbers are not identified in the provided documentation. For RoHS compliant packaging alternatives within the same series, the UMX7501B is noted as an option.