UMF6NTR

Overview

The UMF6NTR is a dual discrete transistor component manufactured by ROHM Semiconductor, housed in a single UMT6 surface-mount package. It integrates one PNP bipolar junction transistor (Tr1) and one N-channel MOSFET (Tr2). The PNP section features a collector-emitter voltage of -12V and a continuous collector current of -500mA. The MOSFET section provides a drain-source voltage of 30V and a continuous drain current of 100mA. Total power dissipation is rated at 150mW across both elements.

Feature Summary

• Integrates a PNP BJT and an N-channel MOSFET within a single compact package to reduce mounting area.

Applications

• Power management circuits

Procurement Notes

Verify the specific suffix 'TR' indicates tape-and-reel packaging with a standard quantity of 3000 units per reel. Confirm RoHS compliance status through official documentation before integration. Ensure design reviews account for the total power dissipation limit shared between the two internal components.

Selection Notes

Select this component when space-constrained designs require combined switching capabilities using both bipolar and field-effect technologies. Evaluate thermal constraints carefully as the 150mW total dissipation applies to the entire package. Verify that the -12V PNP and 30V MOSFET ratings align with the target circuit voltages.

Part Context

This part belongs to the UMF6N series of power management transistors. It utilizes a silicon epitaxial planar structure for both the PNP and N-channel elements. The device is designed for surface mount assembly in the UMT6 footprint, also known as SC-88 or EIAJ SC-88.

Replacement Considerations

No verified public substitute part numbers are available in the provided source material.