UMT1NTN

Overview

The UMT1NTN is a dual PNP bipolar junction transistor (BJT) array manufactured by ROHM Semiconductor. It features a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current (Ic) of -150 mA. The device operates within a junction temperature range up to +150°C and has a power dissipation rating of 150 mW. Key electrical parameters include a DC current gain (hFE) ranging from 120 to 560 at -1 mA, a transition frequency (fT) of 140 MHz, and a collector-emitter saturation voltage of 500 mV. It is housed in a compact SOT-363 (UMT6) surface-mount package.

Feature Summary

• Dual independent PNP transistors integrated into a single compact surface-mount package for space-efficient circuit design.
• High DC current gain capability with a minimum value of 120, suitable for efficient signal amplification and switching applications.
• Robust thermal performance allowing operation at junction temperatures up to +150°C.

Applications

• General-purpose signal switching and logic interface circuits
• Small-signal amplification stages in consumer electronics
• Level shifting and buffering in portable devices

Procurement Notes

Verify the specific ordering suffix when purchasing, as it determines the packaging format such as cut tape or reel. Confirm RoHS compliance status through official datasheets or manufacturer documentation prior to integration. Ensure that the component's polarity and pinout match the target schematic, as dual BJT arrays require precise connection to avoid circuit malfunction.

Selection Notes

Select the UMT1NTN for designs requiring two matched PNP transistors in a minimal footprint. Consider its 150 mA current limit and 150 mW power dissipation when determining thermal management needs. Compare its 140 MHz transition frequency against application bandwidth requirements to ensure adequate high-frequency performance for the intended signal processing tasks.

Part Context

The UMT1NTN belongs to the UMT1N series of dual PNP transistors from ROHM Semiconductor. It shares the same UMT6 (SOT-363) physical package form factor with other variants in the family, such as the NPN-only UMX1NTN and complementary pairs like UMX3NTN. This series is designed to replace discrete components, reducing board space and assembly complexity in modern electronic devices.

Replacement Considerations

Direct functional substitutes include the UMX1NTN if NPN polarity is acceptable, or other dual PNP arrays in the SOT-363 package from ROHM. Verify pin compatibility and electrical ratings before substituting with components from other manufacturers to ensure equivalent performance in voltage, current, and gain specifications.

FAQ

What is the maximum collector-emitter voltage for the UMT1NTN?

The maximum collector-emitter voltage (VCEO) is 50 V.

Does the UMT1NTN contain built-in biasing resistors?

No, the UMT1NTN is a standard dual PNP BJT array without internal resistors. Digital transistors with built-in resistors belong to different series, such as the UMZ or UMH families.

What is the typical package type for this component?

The UMT1NTN is available in the SOT-363 package, also referred to as UMT6 or SC-88, which is a 6-terminal surface-mount case.