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The UMX1NFHATN is a dual NPN digital transistor manufactured by ROHM Semiconductor, housed in a compact SOT-363 (UMT6) surface-mount package. It integrates two independent NPN transistors with built-in bias resistors to simplify circuit design and reduce component count. Key electrical specifications include a collector-emitter voltage (VCEO) of 50V, a continuous collector current of 100mA, and a transition frequency of 250MHz. The device features a typical input resistance of 10kΩ and a maximum power dissipation of 150mW. Certified under AEC-Q101 standards, it supports automotive applications with an operating temperature range up to +150°C.
Verify the specific suffix 'TN' indicates tape-and-reel packaging when ordering. Confirm AEC-Q101 automotive qualification requirements match your system's reliability standards. Check for alternative suffixes if different packaging formats are needed. Ensure compatibility with standard SMT assembly processes for the UMT6 footprint.
Select this component when a dual NPN digital transistor with 50V rating and 100mA current capacity is required. The 10kΩ input resistance suits general logic interfacing. Consider the SOT-363 package size constraints and thermal dissipation limits of 150mW during layout. Verify that the 250MHz transition frequency meets the switching speed requirements of the target application.
This part belongs to ROHM's UMH series of complex digital transistors designed for automotive and industrial use. It serves as a pre-biased solution replacing discrete resistor-transistor networks. The UMX1NFHATN specifically denotes the dual NPN variant within the UMT6 package family, offering a space-efficient alternative to single transistors with external biasing components.
The UMH3NFHATN is a documented equivalent within the same series, sharing the UMT6 package and dual NPN configuration. Both parts meet AEC-Q101 standards. Verify pinout compatibility and specific resistor values before substitution, as internal biasing ratios may differ between variants.