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The UMX2NTR is a dual NPN bipolar junction transistor array manufactured by Rohm Semiconductor. It features a maximum collector-emitter breakdown voltage of 50V and a continuous collector current rating of 150mA. The device operates with a transition frequency of 180MHz and has a maximum power dissipation of 150mW. Key electrical characteristics include a DC current gain (hFE) of at least 120 at 1mA and 6V, and a saturation voltage of 400mV maximum at 5mA base and 50mA collector currents. The component is housed in a UMT6 surface-mount package, equivalent to SOT-363 or SC-88, and supports a maximum junction temperature of 150°C.
Verify the specific ordering suffix when sourcing, as variants such as UMX2NTRTR, UMX2NTRCT, and UMX2NTRDKR exist. Confirm RoHS3 compliance status during acquisition. Note that the manufacturer lists this part as not recommended for new designs; ensure existing supply chains can support long-term availability requirements before finalizing procurement plans.
Select the UMX2NTR when a dual NPN topology is required in a small footprint. Ensure the application current remains below 150mA and voltage stays under 50V. Consider the 150mW power dissipation limit and thermal management needs. Verify that the 180MHz frequency response meets the circuit speed requirements compared to alternative discrete transistors.
The UMX2NTR belongs to the UMX2 series of dual NPN transistor arrays from Rohm Semiconductor. This series integrates two independent NPN transistors into a single package to reduce board space. Other members in this family include the UMX3NTR, which offers similar electrical specifications but may differ in internal configuration or pinout arrangements.
Publicly confirmed substitute part numbers are not available in the provided documentation. Designers should consult official replacement guides or engineering support for qualified alternatives if this component is discontinued.