UMX4NTR

Overview

The UMX4NTR is a dual NPN bipolar junction transistor manufactured by ROHM Semiconductor, housed in an SOT-363-6 surface-mount package. It features a collector-emitter voltage of 20 V and a continuous collector current of 50 mA. The device has a power dissipation rating of 150 mW and operates up to +150°C. Key electrical parameters include a transition frequency of 1.5 GHz, a collector-base voltage of 30 V, and an emitter-base voltage of 3 V. The saturation voltage is 500 mV at specified conditions.

Feature Summary

• Dual NPN configuration within a compact SMD footprint
• High-speed operation with 1.5 GHz transition frequency
• Automotive-grade reliability via AEC-Q101 compliance

Applications

• Automotive electronic circuits requiring high reliability
• General-purpose switching applications
• Low-voltage signal processing stages

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm exact packaging and automotive qualification status. Confirm RoHS compliance details directly from the manufacturer's datasheet before integration into production schedules.

Selection Notes

Select this component for designs requiring dual NPN transistors in a small outline package with high-frequency capabilities. Ensure the 20 V collector-emitter voltage meets circuit requirements and that thermal management supports the 150 mW power dissipation limit.

Part Context

This part belongs to the UMX4N series of dual bipolar transistors. It serves as a compact solution for integrating two NPN switching elements into space-constrained printed circuit board layouts while maintaining standard interface compatibility.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material.