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Product Detailed Parameters
- Description：SI PPIN HERMETIC MELF
- Series：-
- Mfr：Microchip Technology
- Package：Tape & Reel (TR)
- Diode Type：PIN - Single
- Voltage - Peak Reverse (Max)：100V
- Current - Max：-
- Capacitance @ Vr, F：3pF @ 0V, 1MHz
- Resistance @ If, F：1Ohm @ 100mA, 64MHz
- Power Dissipation (Max)：-
- Operating Temperature：-65°C ~ 150°C
- Package / Case：SQ-MELF
- Supplier Device Package：-
- Grade：-
- Qualification：-
Download product information
Overview
The UMX5101SM is a single PIN diode manufactured by Microchip Technology. It utilizes silicon technology and is housed in a hermetic MELF package. The component operates within a temperature range of -65°C to 150°C.
Feature Summary
- Hermetic sealing for environmental protection
- Single PIN diode configuration
- Silicon-based construction
Applications
- RF switching applications
- Attenuator circuits
- Phase shifter designs
Procurement Notes
Verify the specific ordering suffix against official Microchip documentation to ensure correct packaging and variant selection. Confirm that the hermetic MELF package meets the environmental requirements of the target application. Cross-reference the datasheet specifications with system constraints before finalizing procurement decisions.
Selection Notes
Select this component when hermetic reliability is required for RF signal control. The wide operating temperature range supports demanding environments. Ensure the circuit design accommodates the specific capacitance characteristics defined in the official datasheet for optimal performance.
Part Context
This part belongs to the Microchip Technology PIN diode product line. It is designed for high-frequency applications requiring precise signal control. The hermetic package distinguishes it from standard commercial grade alternatives, offering enhanced durability for specialized electronic systems.
Replacement Considerations
Consult official Microchip substitution lists for verified equivalents. Generic replacements may not match the hermetic sealing or specific electrical parameters required for critical RF applications.
