SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The UMX5NTR is a dual NPN bipolar junction transistor array manufactured by Rohm Semiconductor. It integrates two 2SC3838K chips within a compact UMT6 surface-mount package, designed for high-frequency applications. The device features a collector-emitter breakdown voltage of 11V and a maximum continuous collector current of 50mA. With a transition frequency (fT) of 3.2GHz and low output capacitance of 0.9pF, it supports efficient signal processing in RF circuits. Power dissipation is rated at 150mW, with a maximum operating junction temperature of 150°C.
Verify the component matches the specific UMT6 package configuration and electrical ratings required for your circuit design. Confirm that the 11V breakdown voltage and 50mA current limits align with system constraints. Ensure compatibility with RoHS3 standards if environmental compliance is mandatory for your manufacturing process.
Select this component when space constraints require dual transistor integration in a small footprint. Consider its high transition frequency for applications demanding rapid signal response. Evaluate the 150mW power dissipation capability against thermal management requirements in dense PCB layouts.
This part belongs to the UMX5 series of dual NPN transistor arrays from Rohm Semiconductor. It utilizes the same internal chip structure as the 2SC3838K but offers a more compact mounting solution suitable for modern electronic devices requiring miniaturized components.
Direct substitutes include other dual NPN arrays with similar fT and voltage ratings. Verify pinout compatibility and thermal characteristics before swapping.