SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The UMY1N-TP is a dual bipolar junction transistor array manufactured by Micro Commercial Components, housed in a compact SOT-353 surface-mount package. It integrates one NPN and one PNP transistor within a single device to facilitate space-efficient circuit designs. The component supports a maximum collector-emitter voltage of 50V and a continuous collector current of 150mA. Key electrical characteristics include a transition frequency of 250MHz and a maximum power dissipation of 150mW. Internal base resistors are typically configured at 4.7kOhms with a ratio of 10, ensuring stable switching performance in digital logic applications.
Verify the specific suffix designation when ordering, as variants such as UMY1N-TPHF may indicate halogen-free compliance. Confirm that the SOT-353 footprint matches the target PCB design, noting potential pinout differences compared to standard SOT-363 packages. Ensure the selected distributor provides official datasheets to validate the integrated resistor values and polarity configuration for the specific batch.
Select this component when a mixed NPN/PNP pair is required in a minimal footprint. It serves as a direct replacement for discrete transistor pairs previously used in TTL or CMOS interfacing stages. Consider the 150mA current rating for low-power switching loads. Verify thermal management requirements, as the 150mW power dissipation limit constrains operation in high-density assemblies without adequate copper plane cooling.
This part belongs to the UMY series of dual transistor arrays from Micro Commercial Components. It complements other series like UMH (dual NPN) and UMD (mixed NPN/PNP with different resistor configurations). The UMY1N-TP specifically targets applications requiring complementary symmetry in a small outline package, offering a cost-effective alternative to using two separate discrete transistors.
The typical internal base resistor value is 4.7 kOhms with a resistance ratio of 10.
Yes, it is a dual transistor array containing one NPN and one PNP transistor.