SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The UMY1NTR is a dual bipolar junction transistor array manufactured by ROHM Semiconductor, housed in a surface-mount UMT5 package (SOT-353). It integrates one NPN and one PNP transistor configured as an emitter-coupled pair. The device supports a maximum collector-emitter voltage of 50V and a continuous collector current of 150mA. Key electrical characteristics include a DC current gain (hFE) of at least 120 at 1mA and 6V, with saturation voltages of 400mV for the NPN and 500mV for the PNP at 5mA/50mA. Transition frequencies are rated at 180MHz for the NPN and 140MHz for the PNP. Power dissipation is limited to 150mW, with a maximum operating junction temperature of +150°C.
Verify component authenticity through official ROHM Semiconductor channels or authorized distributors. Confirm RoHS compliance status and manufacturing date codes against specific project requirements. Ensure storage conditions adhere to moisture sensitivity level guidelines to prevent package damage prior to soldering.
Select this component when space-constrained designs require matched NPN/PNP pairs with high-speed performance. Compare transition frequencies and saturation voltages against alternative arrays if specific gain or speed thresholds are critical. Verify that the 150mA current rating and 150mW power dissipation limits accommodate the thermal profile of the target application.
The UMY1NTR belongs to the UMY1 series of dual bipolar transistor arrays from ROHM Semiconductor. These components are designed for general-purpose switching and amplification tasks where board space is limited. The UMT5 package allows for automated surface-mount assembly, supporting high-volume production environments.
No verified public substitute part numbers were identified in the provided documentation. Consult ROHM Semiconductor technical support for potential cross-references or updated design recommendations.