UMY1NTR

UMY1NTR

$0.32
  • Description:TRANS NPN/PNP 50V 150MA UMT5
  • Series:-

SKU:2f3c105c4da2 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS NPN/PNP 50V 150MA UMT5
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:1 NPN, 1 PNP (Emitter Coupled)
  • Current - Collector (Ic) (Max):150mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Vce Saturation (Max) @ Ib, Ic:400mV @ 5mA, 50mA / 500mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 1mA, 6V
  • Power - Max:150mW
  • Frequency - Transition:180MHz, 140MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:5-TSSOP, SC-70-5, SOT-353
  • Supplier Device Package:UMT5
  • Grade:-
  • Qualification:-

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UMY1NTR

Overview

The UMY1NTR is a dual bipolar junction transistor array manufactured by ROHM Semiconductor, housed in a surface-mount UMT5 package (SOT-353). It integrates one NPN and one PNP transistor configured as an emitter-coupled pair. The device supports a maximum collector-emitter voltage of 50V and a continuous collector current of 150mA. Key electrical characteristics include a DC current gain (hFE) of at least 120 at 1mA and 6V, with saturation voltages of 400mV for the NPN and 500mV for the PNP at 5mA/50mA. Transition frequencies are rated at 180MHz for the NPN and 140MHz for the PNP. Power dissipation is limited to 150mW, with a maximum operating junction temperature of +150°C.

Feature Summary

  • Integrates complementary NPN and PNP transistors in a single emitter-coupled configuration within a compact SMD footprint.
  • Provides high-speed switching capabilities with transition frequencies up to 180MHz for the NPN element.
  • Features low saturation voltage characteristics to minimize power loss during conduction states.

Applications

  • High-frequency signal processing circuits requiring complementary amplification.
  • Oscillator circuits utilizing the emitter-coupled pair topology.
  • Compact digital logic interfaces and level shifting applications.

Procurement Notes

Verify component authenticity through official ROHM Semiconductor channels or authorized distributors. Confirm RoHS compliance status and manufacturing date codes against specific project requirements. Ensure storage conditions adhere to moisture sensitivity level guidelines to prevent package damage prior to soldering.

Selection Notes

Select this component when space-constrained designs require matched NPN/PNP pairs with high-speed performance. Compare transition frequencies and saturation voltages against alternative arrays if specific gain or speed thresholds are critical. Verify that the 150mA current rating and 150mW power dissipation limits accommodate the thermal profile of the target application.

Part Context

The UMY1NTR belongs to the UMY1 series of dual bipolar transistor arrays from ROHM Semiconductor. These components are designed for general-purpose switching and amplification tasks where board space is limited. The UMT5 package allows for automated surface-mount assembly, supporting high-volume production environments.

Replacement Considerations

No verified public substitute part numbers were identified in the provided documentation. Consult ROHM Semiconductor technical support for potential cross-references or updated design recommendations.

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