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Product Detailed Parameters
- Description：TRANS NPN/PNP 50V 150MA UMT6
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：1 NPN, 1 PNP
- Current - Collector (Ic) (Max)：150mA
- Voltage - Collector Emitter Breakdown (Max)：50V
- Vce Saturation (Max) @ Ib, Ic：400mV @ 5mA, 50mA / 500mV @ 5mA, 50mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：120 @ 1mA, 6V
- Power - Max：150mW
- Frequency - Transition：180MHz, 140MHz
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：UMT6
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The UMZ1NFHATR is a dual bipolar junction transistor array manufactured by Rohm Semiconductor, featuring one NPN and one PNP unit in a UMT6 surface-mount package. It supports automotive applications with AEC-Q101 qualification. Key electrical parameters include a maximum collector-emitter voltage of 50V for both transistors and a continuous collector current of 150mA. The device offers transition frequencies of 180MHz for the NPN and 140MHz for the PNP, with a power dissipation rating of 150mW. Saturation voltages are specified at 400mV (NPN) and 500mV (PNP) under specific base and collector currents.
Feature Summary
- Automotive-grade reliability certified under AEC-Q101 standards
- Compact UMT6 surface-mount packaging for space-constrained designs
- Integrated NPN and PNP configurations within a single component
Applications
- Automotive electronic control units requiring signal switching
- General-purpose logic level translation circuits
- Driver stages for low-power loads in industrial equipment
Procurement Notes
Verify the complete part number including the suffix to ensure correct packaging configuration. Confirm that the AEC-Q101 automotive grade requirement aligns with the target application's environmental specifications. Check the latest datasheet for any updates on recommended operating conditions or thermal management guidelines before finalizing the design.
Selection Notes
Select this component when a matched NPN/PNP pair is required in a minimal footprint. Ensure the 50V voltage rating and 150mA current capacity meet the circuit demands. Consider the transition frequency limits if high-speed switching is involved. Verify that the UMT6 package dimensions fit the PCB layout constraints.
Part Context
This part belongs to the UMZ1 series of dual bipolar transistor arrays from Rohm. It is designed to replace discrete transistor pairs, reducing board space and assembly complexity. The UMT6 package is equivalent to SOT-363, providing a standardized form factor for surface-mount technology implementations in consumer and automotive electronics.
Replacement Considerations
Direct substitutes may include other dual BJT arrays in UMT6/SOT-363 packages with matching 50V/150mA ratings. Verify pinout compatibility and electrical characteristics such as hFE and Vce(sat) before substitution. Consult manufacturer cross-reference lists for confirmed equivalent parts.
