UMZ1NT1G

Overview

The UMZ1NT1G is a dual NPN bipolar junction transistor (BJT) array manufactured by onsemi. It integrates two independent NPN transistors within a single surface-mount package, specifically the UMT6 form factor compatible with SC-88 and SOT-363 standards. The device is designed for general-purpose switching and amplification applications in low-power circuits. Key electrical characteristics include a maximum collector-emitter voltage (Vceo) of 50V and a continuous collector current (Ic) rating of 150mA per transistor. The component features a transition frequency (fT) of 180MHz, ensuring adequate performance for high-speed digital switching tasks. Power dissipation is rated at 150mW, with an operating junction temperature range extending up to 150°C.

Feature Summary

• Dual NPN configuration providing two independent switching elements in a compact footprint
• Surface-mount UMT6 package optimized for automated assembly and space-constrained designs
• High-frequency capability suitable for digital logic interfacing and signal processing

Applications

• General-purpose digital switching in consumer electronics
• Logic level translation and buffering in embedded systems
• Signal conditioning circuits requiring small-form-factor transistors

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status through the latest product change notifications or environmental files provided by onsemi. Cross-reference the UMT6 package designation with standard SOT-363 pinouts to guarantee mechanical compatibility during PCB layout and assembly processes.

Selection Notes

Select this component when a dual NPN configuration is required in a minimal surface-mount package. Ensure the application voltage does not exceed the 50V Vceo limit and that the total power dissipation remains within the 150mW thermal constraints. Consider the 180MHz transition frequency for switching speed requirements compared to lower-performance general-purpose alternatives.

Part Context

This part belongs to the UMZ1N series of dual BJT arrays from onsemi. It serves as a discrete solution for integrating multiple switching functions into a single component, reducing board space and assembly complexity compared to using individual transistors. The UMT6 package is widely used in portable devices where size efficiency is critical.

Replacement Considerations

Direct substitutes may include other dual NPN transistors in UMT6/SC-88/SOT-363 packages with matching 50V Vceo and 150mA Ic ratings. Verify pinout compatibility and electrical parameters such as hFE and fT before substitution. Check for equivalent thermal resistance and power dissipation capabilities to ensure reliable operation in the target application.