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The UMZ7NTR is a bipolar transistor array manufactured by ROHM Semiconductor, featuring one NPN and one PNP transistor in a UMT-6 surface-mount package. It supports a maximum collector-emitter voltage of 12V and continuous collector current of 500mA. The device offers high-speed switching with transition frequencies of 320MHz for the NPN and 260MHz for the PNP element. Power dissipation is rated at 150mW, suitable for compact electronic designs requiring dual-polarity signal processing.
Verify component authenticity through authorized channels. Confirm RoHS compliance status prior to integration. Review datasheet specifications for thermal management requirements. Ensure packaging integrity matches design constraints. Validate electrical parameters against application needs before finalizing procurement decisions.
Select this component for designs requiring integrated dual-transistor functionality in small form factors. Consider the 12V voltage rating and 500mA current capacity for load requirements. Evaluate the 150mW power dissipation limit for thermal planning. Compare switching speeds against circuit timing requirements to ensure adequate performance margins.
This part belongs to ROHM's bipolar transistor array series, designed for space-constrained applications. The UMT-6 package provides efficient board utilization while maintaining reliable electrical connections. It serves as a compact solution for replacing discrete transistor pairs in modern electronics manufacturing.
Check manufacturer lifecycle status as some sources indicate NRND classification. Verify pinout compatibility with existing footprints. Confirm electrical parameter equivalence for voltage, current, and frequency ratings before substitution.