UMZ8NTR

Overview

The UMZ8NTR is a dual bipolar junction transistor (BJT) array manufactured by ROHM Semiconductor, housed in a UMT6 surface-mount package. It integrates one PNP transistor (Tr1) and one NPN transistor (Tr2). The PNP section features a collector-emitter voltage of -12V and a transition frequency of 260MHz. The NPN section supports a collector-emitter voltage of 50V with a transition frequency of 180MHz. Both transistors share a total power dissipation limit of 150mW at 25°C, with a maximum junction temperature of 150°C.

Feature Summary

• Combines a high-voltage NPN transistor and a low-voltage PNP transistor within a single compact footprint.

Applications

• Power management circuits requiring mixed polarity switching.

Procurement Notes

Verify the specific ordering suffix to confirm the packaging format. The 'TR' suffix indicates a reel quantity of 3000 pieces. Confirm RoHS compliance status and ensure the procurement channel provides valid traceability documentation for the manufacturing lot.

Selection Notes

Select this component when space constraints require two discrete transistors in one package. Ensure the circuit design respects the individual voltage ratings: 50V for the NPN side and 12V for the PNP side. Verify that the total power dissipation does not exceed 150mW under operating conditions.

Part Context

This part belongs to the UMZ8N series, which pairs a 2SC2412K NPN chip with a 2SA2018 PNP chip. It serves as a compact alternative to using separate discrete components, simplifying PCB layout for applications needing both NPN and PNP switching capabilities.

Replacement Considerations

The EMZ8 is a pin-compatible alternative packaged in an EMT6 housing. When substituting, verify that the physical dimensions of the EMT6 package fit the existing board footprint and that electrical parameters meet the design requirements.