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The UNR211100L is a Silicon PNP epitaxial planar transistor with built-in resistors from the UNR211x Series. It operates at a maximum collector current of -100 mA and withstands collector-emitter voltages up to -50 V, with a total power dissipation rating of 200 mW. The device integrates two bias resistors: R1 is 10 kΩ and R2 is 10 kΩ. It utilizes a Mini3-G1 (SC-59) package for surface mounting. The component is designed for digital circuits and complies with the RoHS Directive.
Verify the specific suffix '00L' against official Panasonic documentation to confirm availability status and exact marking symbols. Confirm that the internal resistance values match the standard UNR2111 specifications if the suffix denotes a specific packaging variant. Check lifecycle stage details on the manufacturer website before finalizing procurement plans.
Select this component when a PNP transistor with integrated base and emitter biasing resistors is required for space-constrained designs. Ensure the 10 kΩ resistor values align with the target logic voltage levels and drive requirements. Verify that the 200 mW power dissipation limit accommodates the thermal conditions of the final application environment.
This part belongs to the UNR211x Series of transistors with built-in resistors manufactured by Panasonic Electronic Components. The series offers various resistor combinations to suit different digital switching needs while maintaining a consistent physical footprint and electrical profile for standardized design integration.
Consult official Panasonic cross-reference lists for verified substitutes. Generic equivalents may not replicate the precise internal resistor tolerances or the specific Mini3-G1 package dimensions required for automated assembly compatibility.