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The UNR211400L is a Silicon PNP epitaxial planar transistor with built-in bias resistors, designed for digital circuits. It operates within a collector-emitter voltage of -50 V and a maximum collector current of -100 mA. The device dissipates up to 200 mW at 25°C and features an internal resistance ratio (R1/R2) of 0.21. Electrical characteristics include a forward current transfer ratio (hFE) ranging from 60 to 200 under specified conditions. Transition frequency reaches 80 MHz at 200 MHz test frequencies. The component utilizes the SC-59 package.
Verify the exact lifecycle status through official Panasonic channels before procurement. Confirm that the ordering suffix corresponds to the specific packaging format required for production lines. Ensure compliance with RoHS directives applicable to the target region. Cross-reference the marking symbol '6D' to validate the internal resistor values during incoming inspection.
Select this component when a compact PNP solution with integrated base drive is required. Verify that the -50 V rating meets the system's voltage requirements. Check the hFE range against the necessary gain specifications for the intended load. Consider the thermal dissipation limits if operating near maximum ambient temperatures.
This part belongs to the UNR211x Series, which includes various configurations of transistors with built-in resistors. The series offers multiple resistance ratios to suit different logic families. The UNR2114 variant specifically provides a 10 kΩ input resistor and a 47 kΩ output resistor configuration.
Compatible substitutes within the same series include UNR2110, UNR2111, UNR2112, UNR2113, UNR2115, UNR2116, UNR2117, UNR2118, UNR2119, UNR211D, UNR211E, UNR211F, UNR211H, UNR211L, UNR211M, UNR211N, UNR211T, UNR211V, and UNR211Z.