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The UNR211500L is a silicon PNP epitaxial planar transistor with a built-in base resistor, designed for digital circuits. It features a Mini3-G1 package (SC-59) and operates with a maximum collector current of 100 mA and a collector-emitter voltage of -50 V. The integrated base resistor (R1) has a nominal value of 10 kΩ. Key electrical characteristics include a DC current transfer ratio (hFE) of 160 to 460 at IC = -5 mA and VCE = -10 V, a collector-emitter saturation voltage of 0.25 V max at IC = -10 mA and IB = -0.3 mA, and a transition frequency of 80 MHz. Total power dissipation is rated at 200 mW.
Verify the specific part number against official Panasonic Industry documentation to confirm availability status, as lifecycle stages may include planned maintenance or discontinuation. Ensure compliance with RoHS Directive requirements if applicable to the target application environment. Cross-reference datasheet revision dates to validate parameter accuracy before finalizing procurement specifications.
Select this component when a PNP pre-biased transistor with a 10 kΩ base resistor is required for digital switching. Confirm that the Mini3-G1 package dimensions fit the PCB layout constraints. Verify that the 100 mA collector current and 200 mW power dissipation ratings meet the circuit's thermal and load requirements under expected operating temperatures.
The UNR211500L belongs to the UNR211x Series of transistors with built-in resistors manufactured by Panasonic Electronic Components. This series offers various resistor values and configurations to simplify biasing networks in digital designs. The device is part of Panasonic's portfolio of small-signal bipolar transistors intended for cost reduction through downsizing and part consolidation.
Direct substitutes within the same series include UNR2110, UNR2111, UNR2112, UNR2113, UNR2114, UNR2116, UNR2117, UNR2118, UNR2119, UNR211D, UNR211E, UNR211F, UNR211H, UNR211L, UNR211M, UNR211N, UNR211T, UNR211V, and UNR211Z. These alternatives share the same package and basic transistor characteristics but differ in internal resistor values or ratios.