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The UNR211L is a Silicon PNP epitaxial planar composite device featuring built-in bias resistors, designed for digital circuits. It operates with a collector-emitter voltage of -50 V and a maximum collector current of -100 mA. The total power dissipation is rated at 200 mW. This specific variant includes two integrated resistors: R1 is 4.7 kΩ and R2 is 4.7 kΩ. The forward current transfer ratio (hFE) ranges from 80 to 400. Transition frequency is specified at 80 MHz under standard conditions. The component utilizes an EIAJ SC-59 Mini3-G1 package.
Verify the exact ordering code against the manufacturer's official database before purchase. Confirm that the SC-59 package dimensions match the target PCB footprint. Check the latest lifecycle status on the Panasonic semiconductor website to ensure availability for new designs. Ensure compliance with RoHS directives if required by the end application specifications.
Select this component when a PNP transistor with a fixed 1:1 resistor ratio is needed for digital switching. Verify that the -50 V voltage rating meets the circuit requirements. Consider the hFE range of 80 to 400 for gain stability. Compare thermal dissipation limits against the expected operating temperature range to ensure reliability within the 200 mW power constraint.
This part belongs to the UNR211x series, which encompasses various combinations of PNP transistors and built-in resistors. The series allows designers to choose specific resistance values and ratios to optimize base drive currents without adding discrete components. The UNR211L specifically provides equal resistance values for both internal paths.
Direct substitutes include other parts from the UNR211x family with identical electrical characteristics and pinout. Verify compatibility with alternative manufacturers' equivalents by matching the SC-59 package and -50 V / -100 mA ratings. Ensure the replacement maintains the same 4.7 kΩ resistor configuration.