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The UNR211700L is a Silicon PNP epitaxial planar transistor with a built-in resistor, designed for digital circuits. It features an EIAJ SC-59 (Mini3-G1) package with three terminals. Absolute maximum ratings at Ta = 25°C include a collector-base voltage of -50 V, collector-emitter voltage of -50 V, and collector current of -100 mA. The total power dissipation is 200 mW, with a junction temperature limit of 150°C. Storage temperature ranges from -55 to +150°C. Electrical characteristics specify a collector-base cutoff current of 0.1 µA and a collector-emitter cutoff current of 0.5 µA. The forward current transfer ratio (hFE) typically ranges from 160 to 460. Input resistance R1 is specified at 22 kΩ.
Verify the specific lifecycle status of the UNR211700L through official Panasonic channels, as the datasheet indicates potential maintenance or discontinuation phases. Confirm that the ordering suffix does not alter the electrical function unless explicitly documented in the manufacturer's specifications.
Select this component when a compact PNP transistor with integrated base biasing is required for digital logic applications. Ensure the circuit design accommodates the -50 V voltage limits and 200 mW power dissipation constraints within the operating temperature range.
This part belongs to the UNR211x Series, which encompasses various configurations of transistors with built-in resistors. The series offers different resistance values and hFE rankings to suit diverse digital switching requirements while maintaining a standardized small outline package format.
Consult the official Panasonic semiconductor website for the latest replacement information or alternative parts within the UNR211x family.