UNR211F00L

Overview

The UNR211F00L is a Silicon PNP epitaxial planar transistor with built-in resistors, designed for digital circuits. It features a collector-emitter voltage (VCEO) of -50 V and a maximum collector current (IC) of -100 mA. The device incorporates two integrated bias resistors: R1 is 4.7 kΩ and R2 is 10 kΩ. It operates within a junction temperature range of -55°C to +150°C and has a total power dissipation rating of 200 mW at 25°C ambient temperature.

Feature Summary

• Integrates dual bias resistors to reduce component count and equipment size
• Utilizes Mini3-G1 package for automated insertion via tape or magazine packing

Applications

• Digital logic interface circuits
• Switching applications in consumer electronics
• General-purpose signal processing

Procurement Notes

Verify the specific ordering suffix against Panasonic's official lifecycle database before procurement. Confirm RoHS compliance status and check for any planned maintenance or discontinuation notices on the manufacturer's semiconductor website to ensure long-term supply availability.

Selection Notes

Select this component when a compact PNP switching solution with fixed base biasing is required. Ensure the circuit design accommodates the specified -50 V collector-emitter voltage limit and verify that the integrated resistor values align with the target logic levels and drive requirements.

Part Context

This part belongs to the UNR211x Series, which includes various configurations of PNP transistors with different internal resistor ratios. The series is engineered for cost reduction through downsizing and simplified assembly processes in mass-produced electronic devices.

Replacement Considerations

Direct substitutes include other members of the UNR211x family, such as UNR211F or UN211F, provided their specific resistor values match the application requirements. Verify pinout compatibility and electrical ratings before substitution.