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The Panasonic UNR211H00L is a composite device featuring a silicon PNP epitaxial planar transistor with built-in bias resistors, designed for digital circuits. It operates within a collector-emitter voltage of -50 V and a maximum collector current of -100 mA, with a total power dissipation of 200 mW at 25°C. The component integrates two resistors: R1 is 2.2 kΩ and R2 is 10 kΩ, yielding a resistance ratio (R1/R2) ranging from 0.17 to 0.27. It utilizes the SC-59 (Mini3-G1) surface-mount package.
Verify the specific ordering suffix against official Panasonic documentation to confirm availability status. The datasheet indicates lifecycle stages including planned maintenance, active maintenance, planned discontinuation, and discontinued types. Confirm compliance with RoHS Directive (EU 2002/95/EC) through manufacturer certification before procurement.
Select this model when a PNP transistor with a specific 2.2 kΩ base resistor and 10 kΩ emitter resistor is required. Ensure the circuit design accommodates the -50 V voltage limits and 200 mW power dissipation constraints. Verify that the SC-59 package dimensions fit the target PCB layout.
This part belongs to the UNR211x Series, which includes various configurations of transistors with built-in resistors. The series offers different resistance values and ratios to suit diverse digital circuit requirements while maintaining the same physical footprint and basic electrical characteristics.
Cross-reference with other UNR211x variants such as UNR211M or UNR211V if different resistance ratios are acceptable. Verify pinout compatibility and thermal performance before substituting.