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The UNR211L00L is a Silicon PNP epitaxial planar transistor with built-in resistors, designed for digital circuits. It features an internal connection of R1=4.7 kΩ and R2=4.7 kΩ. Absolute maximum ratings include a collector-base voltage (V_CBO) of -50 V, collector-emitter voltage (V_CEO) of -50 V, collector current (I_C) of -100 mA, and total power dissipation (P_T) of 200 mW at 25°C. The junction temperature reaches 150°C, with a storage range from -55°C to +150°C. Electrical characteristics specify a forward current transfer ratio (h_FE) of 20, input resistance tolerance of ±30%, and a transition frequency (f_T) of 80 MHz.
Verify the specific lifecycle status through official Panasonic channels before procurement, as this series includes maintenance and discontinued product types. Confirm RoHS compliance documentation matches the required EU directive standards for your manufacturing region. Ensure the SC-59 footprint aligns with your PCB design guidelines.
Select the UNR211L variant specifically when a 1:1 resistor ratio (4.7 kΩ / 4.7 kΩ) is required for PNP switching applications. Compare h_FE and saturation voltage requirements against other members of the UNR211x family if different gain or resistance values are needed. Verify that the -50 V voltage rating meets the circuit's maximum operating conditions.
This component belongs to the UNR211x Series, a comprehensive line of composite devices combining PNP transistors with various built-in resistor configurations. The series offers multiple resistance combinations to simplify circuit design across different digital logic families. It serves as a direct replacement for older UN211x part numbers while maintaining the same physical footprint and electrical performance profiles.
The UN211L is the conventional equivalent part number for the UNR211L. Verify pinout compatibility and ensure the replacement device meets the same absolute maximum ratings and thermal dissipation requirements for the target application.