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The UNR211M00L is a Silicon PNP epitaxial planar transistor with built-in bias resistors, designed for digital circuits. It operates within a collector-emitter voltage of -50 V and a collector current limit of -100 mA, with a total power dissipation rating of 200 mW at 25°C. The component integrates two resistors: R1 is 2.2 kΩ and R2 is 47 kΩ. It utilizes the Mini3-G1 package (EIAJ SC-59) and supports a junction temperature up to 150°C.
Verify the specific lifecycle status on the manufacturer's official semiconductor website before procurement, as the datasheet indicates potential maintenance or discontinuation phases. Confirm that the ordering suffix corresponds exactly to the required resistance values and package type. Ensure compliance with RoHS directives if applicable to the target region.
Select this component when a compact solution for PNP switching is required without external base resistors. Verify that the integrated resistor ratio meets the specific drive requirements of the connected load. Consider the thermal derating curves if operating above 25°C ambient temperature to ensure the 200 mW limit is not exceeded.
This part belongs to the UNR211x Series, which encompasses various combinations of PNP transistors and built-in resistors. The series shares common electrical characteristics such as voltage ratings and package types, differentiated primarily by the specific resistance values of R1 and R2 integrated into each device variant.
Direct substitutes include other UNR211x variants from Panasonic with matching resistance ratios, such as UNR211L or UNR211N, provided their specific R1/R2 values align with the circuit design requirements. Cross-manufacturer replacements must match the SC-59 footprint and electrical limits.