UNR211V00L

Overview

The UNR211V00L is a composite device featuring a silicon PNP epitaxial planar transistor with built-in bias resistors, designed for digital circuits. It operates within a collector-emitter voltage of -50 V and a maximum collector current of -100 mA, with a total power dissipation rating of 200 mW at 25°C. The component integrates two resistors: R1 is 2.2 kΩ and R2 is 2.2 kΩ, resulting in a resistance ratio (R1/R2) of 1.0. It utilizes the SC-59 (Mini3-G1) surface-mount package.

Feature Summary

• Integrates a single PNP transistor with dual bias resistors to reduce component count and equipment size.
• Utilizes a compact SC-59 surface-mount package suitable for automatic insertion via tape or magazine packing.

Applications

• Digital logic interface circuits
• Switching applications requiring integrated bias networks
• General-purpose electronic equipment

Procurement Notes

Verify the specific ordering suffix against official Panasonic documentation to confirm exact resistor values and electrical characteristics. Confirm compliance with RoHS directives and check the manufacturer's website for current lifecycle status, as this series may include maintenance or discontinued product types.

Selection Notes

Select based on required bias resistor ratios and hFE ranges. The UNR211V variant specifically provides a 1:1 resistance ratio. Ensure the application voltage does not exceed the -50 V collector-emitter limit and that thermal management accommodates the 200 mW power dissipation rating.

Part Context

This part belongs to the UNR211x Series, which includes various configurations of PNP transistors with different internal resistor combinations. The 'V' suffix denotes the specific 2.2 kΩ / 2.2 kΩ resistor configuration within this family.

Replacement Considerations

Compatible substitutes within the same series include UNR211L (4.7 kΩ/4.7 kΩ) and UNR211Z (4.7 kΩ/22 kΩ), provided their respective resistance ratios match the circuit requirements.