SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The UNR212100L is a PNP silicon epitaxial planar transistor with built-in bias resistors, designed for digital circuits. It operates within a collector-emitter voltage of -50 V and supports a maximum collector current of -500 mA. The device features a total power dissipation rating of 200 mW at 25°C ambient temperature. Internal resistance values are specified as R1 = 2.2 kΩ and R2 = 2.2 kΩ. Transition frequency reaches 200 MHz. The component utilizes the Mini3-G1 (SC-59) surface-mount package.
Verify the specific suffix against Panasonic's official lifecycle database to confirm availability status. The datasheet indicates this series includes maintenance and discontinued product stages. Confirm RoHS compliance and check for updated Product Standards before finalizing procurement plans.
Select based on required resistor ratios; the UNR2121 variant provides equal 2.2 kΩ resistors. Ensure the design accounts for the -50 V polarity constraints inherent to PNP devices. Verify that the 200 mW power dissipation limit accommodates the thermal environment of the target application.
This component belongs to the UNR212x Series manufactured by Panasonic Electronic Components. The series encompasses various PNP transistors with different internal resistor configurations, all sharing the same Mini3-G1 package and fundamental electrical characteristics for digital applications.
Consult the manufacturer's cross-reference documentation for verified substitutes. The UN2121 designation serves as the conventional part number equivalent for this specific configuration.
The UNR2121 contains two built-in resistors, R1 and R2, both valued at 2.2 kΩ.
No. The datasheet specifies standard applications only and explicitly advises consulting sales staff for special applications like aerospace due to reliability requirements.
The transition frequency (fT) is 200 MHz under conditions of VCB = -10 V, IE = 50 mA, and f = 200 MHz.