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The UNR212300L is a silicon PNP epitaxial planar transistor with built-in resistors, designed for digital circuits. It features a Mini3-G1 (SC-59) package and operates with a collector-emitter voltage of -50 V and a maximum collector current of -500 mA. The device includes an internal base resistor (R1) of 10 kΩ and an emitter resistor (R2) of 10 kΩ. Key electrical characteristics include a forward current transfer ratio (hFE) of at least 60 at -5 mA, a transition frequency of 200 MHz, and a total power dissipation of 200 mW.
Verify the specific part number against official manufacturer documentation to confirm availability status. Check for lifecycle stages such as planned maintenance or discontinuation before finalizing procurement plans. Ensure compliance with RoHS directives and verify that the requested components match the exact specifications required for the design.
Select this component when a compact PNP transistor with integrated biasing resistors is required for space-constrained designs. Consider the 10 kΩ resistance values for R1 and R2 to ensure proper biasing in the target circuit. Evaluate the 200 MHz transition frequency and 200 mW power dissipation limits to confirm suitability for the intended switching speeds and thermal conditions.
This component belongs to the UNR212x Series manufactured by Panasonic Electronic Components. The series offers various combinations of internal resistors to suit different digital circuit requirements while maintaining a consistent Mini3-G1 footprint. It is specifically engineered to simplify circuit layouts by replacing discrete transistors and external resistors with a single surface-mount unit.
Consult the official Panasonic datasheet for direct cross-references. Verify pinout compatibility and electrical ratings if substituting with other pre-biased transistors from different manufacturers.