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The UNR212X00L is a PNP silicon epitaxial planar transistor with built-in bias resistors, designed for digital circuits. It features a Mini3-G1 (SC-59) surface-mount package. Key electrical parameters include a collector-emitter voltage of -50 V and a maximum collector current of -500 mA. The device incorporates an internal base resistor (R1) of 270 Ohms and an emitter resistor (R2) of 5 kOhms. It exhibits a transition frequency of 200 MHz and a total power dissipation rating of 200 mW at 25°C ambient temperature.
Verify the specific suffix against official Panasonic documentation to confirm packaging type and lifecycle status. Confirm RoHS compliance requirements match the project specifications. Check for any maintenance or discontinuation notices on the manufacturer's website before finalizing procurement plans.
Select this component when a PNP pre-biased transistor with a low base resistance ratio is required. Ensure the circuit design accommodates the specific R1/R2 values of 270 Ohms and 5 kOhms respectively. Verify that the -50 V voltage rating meets the system's maximum operating conditions.
This part belongs to the UNR212x series of composite devices manufactured by Panasonic Electronic Components. The series includes various configurations of PNP transistors with different internal resistor ratios to suit diverse digital switching requirements.
Direct substitutes within the same series include UNR212Y, which shares similar voltage and current ratings but utilizes different internal resistor values (3.1 kOhms and 4.6 kOhms). Verify pin compatibility and electrical characteristics before substitution.
The device contains a base resistor (R1) of 270 Ohms and an emitter resistor (R2) of 5 kOhms.
Yes, it has a transition frequency (fT) of 200 MHz, making it suitable for certain high-speed digital switching tasks.
The absolute maximum collector current (IC) is rated at -500 mA.