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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V 0.1A MINI3
- Series：-
- Mfr：Panasonic Electronic Components
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 Only
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：47 kOhms
- Resistor - Emitter Base (R2)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：160 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic：250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：150 MHz
- Power - Max：200 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：Mini3-G1
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Overview
The UNR221000L is a silicon NPN epitaxial planar pre-biased transistor designed for digital circuits. It integrates a single 47 kΩ base resistor (R1) within a Mini3-G1 package, eliminating the need for external biasing components. Key electrical ratings include a collector-emitter voltage of 50 V, a maximum collector current of 100 mA, and a total power dissipation of 200 mW at 25°C. The device features a transition frequency of 150 MHz and a minimum DC current gain of 160 at 5 mA and 10 V.
Feature Summary
- Integrates a single internal bias resistor to reduce component count and board space
- Utilizes a compact Mini3-G1 surface mount package for automated assembly
- Designed specifically for high-speed digital switching applications
Applications
- Digital logic interface circuits
- Switching driver stages
- General-purpose signal processing
Procurement Notes
Verify the specific manufacturer lifecycle status before finalizing designs, as this component may be subject to maintenance or discontinuation plans. Confirm that the Mini3-G1 footprint matches the target PCB layout requirements. Ensure the 47 kΩ internal resistance aligns with the intended drive current specifications.
Selection Notes
Select this part when a single-resistor NPN configuration is required for simplified circuit design. Verify that the 50 V breakdown voltage and 100 mA current limits accommodate the peak operational loads. Consider the thermal constraints associated with the 200 mW power dissipation rating in the final enclosure environment.
Part Context
This component belongs to the Panasonic UNR221x series of composite devices. The series offers various combinations of integrated resistors for different biasing needs. The UNR221000L specifically denotes the variant containing only the base resistor R1, distinguishing it from dual-resistor models in the same family.
Replacement Considerations
Direct substitutes include MUN2240T1G and SMUN2240T1G from onsemi, as well as PDTC144TT,215 from Nexperia. Verify pinout compatibility and exact resistance values when transitioning between manufacturers.
