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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V 0.1A MINI3
- Series：-
- Mfr：Panasonic Electronic Components
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 and R2
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：10 kOhms
- Resistor - Emitter Base (R2)：10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：35 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic：250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：150 MHz
- Power - Max：200 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：Mini3-G1
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Overview
The UNR221100L is a Silicon NPN epitaxial planar transistor with a built-in resistor, designed for digital circuits. It features a Mini3-G1 (SC-59) package and operates at a maximum collector current of 100 mA and a collector-emitter voltage of 50 V. The device includes an internal base resistor (R1) of 10 kΩ and an internal emitter resistor (R2) of 10 kΩ. Key electrical characteristics include a transition frequency of 150 MHz, a forward current transfer ratio (hFE) ranging from 80 to 400, and a total power dissipation of 200 mW.
Feature Summary
- Integrates a single NPN transistor with dual bias resistors to reduce component count and board space.
- Utilizes a compact Mini3-G1 surface-mount package suitable for automated insertion.
- Designed specifically for high-speed switching applications in digital logic circuits.
Applications
- Digital logic interface circuits
- Switching applications in consumer electronics
- General-purpose signal processing equipment
Procurement Notes
Verify the specific ordering suffix against official Panasonic Industry documentation to confirm exact resistance values and binning. Confirm RoHS compliance status and lifecycle stage directly with authorized distributors or the manufacturer before procurement.
Selection Notes
Select this component when a pre-biased NPN transistor with both base and emitter resistors is required. Ensure the 10 kΩ internal resistance values align with the target circuit's drive requirements and that the SC-59 package fits the design constraints.
Part Context
This part belongs to the UNR221x series of composite devices manufactured by Panasonic Industry. These components are silicon NPN epitaxial planar types intended for general electronic equipment and digital circuits, offering a consolidated solution for biasing requirements.
Replacement Considerations
Direct substitutes may include other pre-biased NPN transistors with similar 10k/10k resistor configurations and SC-59 packaging. Verify pinout compatibility and electrical ratings such as VCEO and IC before substitution.
