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The Panasonic UNR221L is a Silicon NPN epitaxial planar composite device featuring an integrated bias resistor network, designed for digital circuit applications. It operates within a collector-emitter voltage range of 50 V and supports a maximum collector current of 100 mA with a total power dissipation of 200 mW at 25°C ambient temperature. The component utilizes the EIAJ SC-59 (Mini3-G1) surface-mount package. Electrical characteristics include a forward current transfer ratio (hFE) ranging from 6 to 200 and a transition frequency of 150 MHz. The internal configuration consists of two resistors, R1 and R2, both specified at 4.7 kΩ.
Verify the specific lifecycle status through official Panasonic channels before finalizing procurement plans. Product specifications are subject to change without notice; confirm that the latest datasheet aligns with design requirements. Ensure compliance with RoHS directives applicable to your region. Contact customer service for mass production validation and updated availability information.
Select this component when a compact NPN solution with fixed biasing is required for digital signals. Verify that the 4.7 kΩ internal resistance values match the target base drive currents. Confirm that the 50 V voltage rating and 100 mA current capacity exceed the maximum operational loads in the specific circuit design.
This part belongs to the UNR221x series, which offers various combinations of NPN transistors and built-in resistors. The series provides standardized solutions for common digital logic levels, allowing designers to replace multiple discrete components with a single surface-mount device.
Direct substitutes within the same series include UNR221K and UNR221Z, which share identical electrical ratings but differ in internal resistor configurations. Cross-reference pinouts and thermal characteristics when evaluating alternative manufacturers' equivalents.