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The UNR221300L is a silicon NPN epitaxial planar transistor with a built-in bias resistor, designed for digital circuits. It features a Mini3-G1 (SC-59) package with dimensions of 2.9 mm length, 1.5 mm width, and 1.1 mm height. The device has a collector-emitter voltage rating of 50 V and a maximum collector current of 100 mA. Internal resistors consist of R1 at 47 kΩ and R2 at 47 kΩ. The transition frequency is specified at 150 MHz, with a total power dissipation of 200 mW.
Verify the specific suffix '00L' against the manufacturer's official documentation to confirm availability status. The datasheet indicates lifecycle stages including maintenance or discontinuation; consult Panasonic Industry directly for current production status and lead times before finalizing procurement plans.
Select this component when a pre-biased NPN transistor is required for digital switching. Ensure the 47 kΩ internal resistance values match the circuit design requirements. Verify that the 100 mA collector current and 50 V voltage ratings exceed the application's peak operating conditions.
This part belongs to the UNR221x series of composite devices manufactured by Panasonic Industry. The series offers various resistor combinations within the same SC-59 package footprint, allowing designers to standardize on a single package type while adjusting biasing characteristics through different part numbers.
Direct substitutes include other UNR2213 variants from Panasonic such as UN2213. Cross-manufacturer replacements must match the SC-59 package, 50V/100mA ratings, and 47kΩ/47kΩ internal resistor configuration.
The UNR2213 contains two internal resistors: R1 is 47 kΩ and R2 is 47 kΩ.
The absolute maximum rating for collector current (IC) is 100 mA at an ambient temperature of 25°C.
Yes, it has a transition frequency (fT) of 150 MHz, making it suitable for many digital switching applications.