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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V 0.1A MINI3
- Series：-
- Mfr：Panasonic Electronic Components
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 Only
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：10 kOhms
- Resistor - Emitter Base (R2)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：160 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic：250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：150 MHz
- Power - Max：200 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：Mini3-G1
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Overview
The UNR221500L is a composite device from the Panasonic UNR221x series, consisting of an NPN silicon epitaxial planar transistor with built-in bias resistors. It is designed for digital circuits and housed in a Mini3-G1 (SC-59) package. Key electrical parameters include a collector-emitter voltage of 50V, a maximum collector current of 100mA, and a total power dissipation of 200mW at 25°C. The internal configuration features two base resistors: R1 is 4.7 kΩ and R2 is 4.7 kΩ. The forward current transfer ratio (hFE) ranges from 60 to 200 under standard conditions.
Feature Summary
- Integrates an NPN transistor with dual bias resistors to reduce component count and board space.
- Utilizes a compact Mini3-G1 surface-mount package suitable for automated assembly.
- Designed specifically for use in digital logic circuits.
Applications
- Digital logic interface circuits
- Switching applications in consumer electronics
- General-purpose signal processing
Procurement Notes
Verify the specific suffix 'L' against the official Panasonic datasheet to confirm resistor values and hFE ranking. Check the manufacturer's website for the latest lifecycle status, as this series may be subject to maintenance or discontinuation plans. Ensure compliance with RoHS directives if required by your application standards.
Selection Notes
Select this component when a single NPN transistor with two specific bias resistors is needed to simplify circuit design. Compare the internal resistance values (4.7kΩ/4.7kΩ) against other variants in the UNR221x series to ensure they match the required biasing network. Consider the SC-59 package size for space-constrained designs.
Part Context
This part belongs to the UNR221x Series, which offers various combinations of NPN transistors with different built-in resistor ratios. The 'UNR221500L' designation corresponds to the specific variant with 4.7kΩ base resistors. Other series members like UNR2211 or UNR2212 offer different resistance values for alternative biasing needs.
Replacement Considerations
Direct substitutes within the same family include other UNR221x variants with similar electrical characteristics but different resistor values. Cross-referencing with generic NPN pre-biased transistors requires verifying the exact internal resistance ratios and hFE specifications to ensure functional equivalence.
FAQ
What are the internal resistor values for the UNR221500L?
The UNR221500L contains two built-in base resistors, R1 and R2, both with a nominal value of 4.7 kΩ.
What is the maximum collector-emitter voltage for this device?
The absolute maximum rating for the collector-emitter voltage (VCEO) is 50V.
Is this component suitable for high-frequency applications?
The datasheet specifies a transition frequency (fT) of 150 MHz, indicating it is suitable for general digital switching but not necessarily for very high-frequency RF applications.
